The Effect of Dielectric Function on a Laser Dressed Donor Impurity in an Inverse Quantum Well
Abstract:The donor energy level of electron for different measure of laser intensities is calculated in an inverse V-shaped quantum well with a suitable dielectric function. The Hartree Fock potential in 3D system is suitably modified and presented for the 2D case. Binding energy of the ground state of a donor is calculated, within the single band effective mass approximation, variationally for the different concentrations at the well centre. The effect of laser on the donor binding energy of the hydrogenic impurity is reported with the effect of nonparabolicity of the conduction band. It is observed that the donor binding energy decreases drastically as intensity of the laser field increases and it decreases as the Al-content decreases. The dependence of donor binding energy on the well width, Al-concentration and the laser field intensities is discussed. This effect can be implemented in device applications, especially for narrow well widths and for a suitable choice of fields. More over, the optoelectronic properties in modulated doped quantum wells under high frequency laser field intensities can also be studied.
Document Type: Research Article
Publication date: June 1, 2010
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