Study of Photoabsorption and Photoelectric Process in GaAs Semiconductor Quantum Dot Nanostructure
We investigate the photoabsorption and photoelectric process from the ground and excited state of a spherical GaAs semiconductor quantum dot nanostructure. We use the effective mass approximation and the parabolic confinement of electron in the dot. Results for absorption coefficient and photoelectric cross sections are presented for various sizes of the dot at various photon energies.
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Document Type: Research Article
Publication date: 2010-06-01
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