Study of Photoabsorption and Photoelectric Process in GaAs Semiconductor Quantum Dot Nanostructure

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We investigate the photoabsorption and photoelectric process from the ground and excited state of a spherical GaAs semiconductor quantum dot nanostructure. We use the effective mass approximation and the parabolic confinement of electron in the dot. Results for absorption coefficient and photoelectric cross sections are presented for various sizes of the dot at various photon energies.


Document Type: Research Article


Publication date: June 1, 2010

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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