Optimization of Annealing for Decreasing of Depth of System of Serial p–n-Junctions in a Heterostructure
It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers, which were formed in the multilayer structure. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. In this paper the both effects (together increasing of sharpness of p–n-junction and increasing of homogeneity of impurity distribution) have been used for production of a system of p–n-junctions (such as bipolar transistor). Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.
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Document Type: Research Article
Publication date: 2010-06-01
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