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Optimization of Annealing for Decreasing of Depth of System of Serial pn-Junctions in a Heterostructure

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It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers, which were formed in the multilayer structure. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. In this paper the both effects (together increasing of sharpness of pn-junction and increasing of homogeneity of impurity distribution) have been used for production of a system of pn-junctions (such as bipolar transistor). Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.
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Keywords: DECREASING OF DEPTH OF THE RECTIFIERS AND TRANSISTORS; DIFFUSION-JUNCTION RECTIFIERS AND BIPOLAR TRANSISTORS; OPTIMIZATION OF ANNEALING OF DOPANTS

Document Type: Research Article

Publication date: 2010-06-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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