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Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

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This paper reports the modeling of Negative Bias Temperature Instability (NBTI) of P-type Si-nanowire MOS field effect transistor (SNWT) and its applications in circuit simulation. The model is based on the reaction-diffusion (R-D) theory together with the reaction probability of bond breaking and reconstruction of the Si–H bond. As a result, the proposed model agrees better with experimental data compared with conventional approach using R-D model alone. The model has been implemented into the SPICE circuit simulator with model parameters calibrated from experimental data. The effects of NBTI on the delays of logic gate and oscillators are evaluated using the model to demonstrate the functionality of the model.
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Keywords: CIRCUIT SIMULATION; COMPACT MODELING; NANOWIRE TRANSISTOR; NBTI; PROBABILITY; REACTION-DIFFUSION

Document Type: Research Article

Publication date: 2010-01-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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