Spatial Dependent Effective Mass for Donor Binding Energies in a Quantum Well in the Influence of an Electric Field
Ionization energies and a shallow donor in a quantum well of the GaAs/Ga1−xAlx As superlattice system are obtained. In the presence of an electric field, a variational procedure within the effective mass approximation is employed. Calculations are presented with constant effective mass and position dependent effective masses that are different for finite and infinite cases. Donor binding energies are calculated using both the approximate method (m*o) and the spatial dependent electron effective mass, m*(z), and the relative differences in the corresponding values are presented for various electric fields. It is found that the (i) the use of constant effective mass (0.067mo) is justified for well size ≥ a* where a* is the effective Bohr radius about 100 Å for GaAs, the ionization energy (ii) decreases as well width increases for a given electric field, (iii) decreases when well width increases, and (iv) shows complicated behaviour when the position dependent mass is included for ≤a*.
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Document Type: Research Article
Publication date: 2009-01-01
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