An Efficient Cell Array Structure of a Polymer Random Access Memory and the Correct Cell Sensing for Sense Amplifier

Authors: Kim, Jung-Ha; Lee, Sang-Sun

Source: Journal of Computational and Theoretical Nanoscience, Volume 5, Number 11, November 2008 , pp. 2140-2143(4)

Publisher: American Scientific Publishers

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Abstract:

Polymer Random Access Memory (PoRAM) is a memory device that Au, N, Cs and etc trapping charge are inserted into polymer material. The previous cell array structure is hard to read data correctly because ofcurrent interference between cells. In this paper, to compensate these problems, a new cell array called “Row Chain Cell Array” is suggested that dose not have current interference. Furthermore, to read data, a current sense amplifier is more efficient and faster than the previous voltage sense amplifier due to low input impedance and low RC delay. They are verified by simulation.

Keywords: NONVOLATILE MEMORY; POLYMER MEMORY; LEAKAGE CURRENT; SENSE AMPLIFIER

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jctn.2008.1110

Publication date: 2008-11-01

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Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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