@article {Autran:2008:1546-1955:1120,
title = "Simulation of Electron Transport in Nanoscale Independent-Gate Double-Gate Devices Using a Full 2D Green's Function Approach",
journal = "Journal of Computational and Theoretical Nanoscience",
parent_itemid = "infobike://asp/jctn",
publishercode ="asp",
year = "2008",
volume = "5",
number = "6",
publication date ="2008-06-01T00:00:00",
pages = "1120-1127",
itemtype = "ARTICLE",
issn = "1546-1955",
eissn = "1546-1963",
url = "https://www.ingentaconnect.com/content/asp/jctn/2008/00000005/00000006/art00010",
doi = "doi:10.1166/jctn.2008.2546",
keyword = "NON-EQUILIBRIUM GREEN'S FUNCTIONS (NEGF), BALLISTIC TRANSPORT, REAL-SPACE APPROACH (2D), DOUBLE-GATE TRANSISTORS, INDEPENDENT-GATE DEVICES",
author = "Autran, Jean-Luc and Munteanu, Daniela",
abstract = "The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schr{\"o}dinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical
insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (510 nm channel lengths) and pure ballistic operation.",
}