Simulation of Electron Transport in Nanoscale Independent-Gate Double-Gate Devices Using a Full 2D Green's Function Approach

Authors: Autran, Jean-Luc; Munteanu, Daniela

Source: Journal of Computational and Theoretical Nanoscience, Volume 5, Number 6, June 2008 , pp. 1120-1127(8)

Publisher: American Scientific Publishers

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Abstract:

The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schrödinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (5-10 nm channel lengths) and pure ballistic operation.

Keywords: DOUBLE-GATE TRANSISTORS; INDEPENDENT-GATE DEVICES; NON-EQUILIBRIUM GREEN'S FUNCTIONS (NEGF); REAL-SPACE APPROACH (2D); BALLISTIC TRANSPORT

Document Type: Research article

DOI: http://dx.doi.org/10.1166/jctn.2008.010

Publication date: 2008-06-01

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Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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