Three-Dimensional Simulations of Quantum Confinement and Random Dopants Effects in Nanoscale nMOSFETs
Abstract:The combined effect of quantum confinement at the Si/SiO2 interface and the discrete distribution of dopants in the active area has been considered in ultrashort channel MOSFETs, via a numerical solution of the three-dimensional self-consistent Poisson/Schrödinger equation. Focusing our attention on the so-called "well tempered" bulk-Si n-MOSFETs with channel length of 25 and 50 nm proposed by D. Antoniadis, we have simulated a large number of devices with the same doping profile, but with different actual discrete distribution of impurities, and have extracted the threshold voltage distribution. We have found that the threshold voltage standard deviation is of the order of tens of millivolt, and that it is affected by quantum confinement in the channel.
Document Type: Research Article
Publication date: June 1, 2008
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