Journal of Computational and Theoretical Nanoscience

A Special Issue on Semiconductor Device Simulation
pp. 997-998(2)
Author: Gehring, Andreas

Semiconductor Device Modeling
pp. 999-1030(32)
Authors: Vasileska, D.; Mamaluy, D.; Khan, H.R.; Raleva, K.; Goodnick, S.M.

Atomistic Simulation of Nanowire Transistors
pp. 1031-1045(15)
Authors: Luisier, Mathieu; Schenk, Andreas

Quantum-Corrected Monte Carlo Simulation of Double Gate Silicon on Insulator Transistors
pp. 1046-1057(12)
Authors: Sampedro, Carlos; Gámiz, Francisco; Godoy, Andrés

Physics and Simulation of Vertical-Cavity Surface-Emitting Lasers
pp. 1058-1071(14)
Authors: Witzigmann, Bernd; Bäcker, Alexandra; Odermatt, Stefan

Impact of High-κ Gate Stacks on Transport and Variability in Nano-CMOS Devices
pp. 1072-1088(17)
Authors: Watling, J.R.; Brown, A.R.; Ferrari, G.; Barker, J.R.; Bersuker, G.; Zeitzoff, P.; Asenov, A.

Overview of Technology Computer-Aided Design Tools and Applications in Technology Development, Manufacturing and Design
pp. 1089-1105(17)
Author: Fichtner, Wolfgang

A Better Understanding of the Requirements for Predictive Modeling of Strain Engineering in nMOS Transistors
pp. 1106-1114(9)
Authors: Comparone, G.; Palestri, P.; Esseni, D.; Lucci, L.; Selmi, L.

Three-Dimensional Simulations of Quantum Confinement and Random Dopants Effects in Nanoscale nMOSFETs
pp. 1115-1119(5)
Authors: Fiori, G.; Di Pascoli, S.; Iannaccone, G.

Simulation of Electron Transport in Nanoscale Independent-Gate Double-Gate Devices Using a Full 2D Green's Function Approach
pp. 1120-1127(8)
Authors: Autran, Jean-Luc; Munteanu, Daniela

Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube FETs
pp. 1128-1137(10)
Authors: Pourfath, Mahdi; Kosina, Hans

Single-Walled Zig-Zag Carbon Nanotube Steady-State Transport Characteristics
pp. 1138-1144(7)
Authors: Akturk, Akin; Goldsman, Neil

Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs
pp. 1145-1151(7)
Authors: Gnani, E.; Reggiani, S.; Gnudi, A.; Rudan, M.; Baccarani, G.

Transport and Noise Calculations for Nanoscale Si Devices Based on the Langevin Boltzmann Equation Expanded with Spherical Harmonics
pp. 1152-1169(18)
Author: Jungemann, C.

Application-Driven Simulation of Nanoscaled CMOS Transistors and Circuits
pp. 1170-1182(13)
Authors: Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.

Modeling and Simulation of Conduction Characteristics and Programming Operation in Nanoscaled Phase-Change Memory Cells
pp. 1183-1191(9)
Authors: Redaelli, A.; Ielmini, D.; Russo, U.; Lacaita, A.L.

Elastic Theory of Low-Dimensional Continua and Its Applications in Bio- and Nano-Structures
pp. 1192-1192(1)
Authors: Tu, Z.C.; Ou-Yang, Z.C.