Morphological Transitions During Si Capping in Ge/Si Nanoislands
Abstract:Atomistic modelling is carried out which supports a continuum model we have developed to explain the recently observed shrinkage of GeSi/Si(001) quantum dots during Si capping. It is shown that Si diffusion into the subsurface layers of the quantum dot significantly lowers the total strain energy of the quantum dot. Taking into account interdiffusion between the quantum dots and the wetting layer, it is further shown that the continuum model predicts an earlier transformation from domes to pyramids and a significantly reduced final size of the capped island than if only intermixing with Si deposited on the island were taken into account.
Document Type: Research Article
Publication date: 2008-03-01
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- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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