Two Dimensional Analytical Potential Modeling of Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)
For future generation silicon integrated devices the Double Gate (DG) MOSFETs are strongly considered. Advantages of DG MOSFETs include excellent scalability due to inherent short channel effect immunity, good sub-threshold slop, high drive current and low sub-threshold capacitances. In the present study we have considered Symmetric Double Gate (SDG) MOSFET. In this paper two dimensional analytical modeling of potential profile for an un-doped ultra thin body Symmetric Double Gate MOSFET in post threshold region by solving Poisson's Equation in a two dimensional boundary value problem has been presented. In this analytical paper the modeling of potential is carried out by varying the device parameters to achieve the desired results.
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Document Type: Research Article
Publication date: 2007-09-01
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- Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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