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Two Dimensional Analytical Potential Modeling of Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)

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Abstract:

For future generation silicon integrated devices the Double Gate (DG) MOSFETs are strongly considered. Advantages of DG MOSFETs include excellent scalability due to inherent short channel effect immunity, good sub-threshold slop, high drive current and low sub-threshold capacitances. In the present study we have considered Symmetric Double Gate (SDG) MOSFET. In this paper two dimensional analytical modeling of potential profile for an un-doped ultra thin body Symmetric Double Gate MOSFET in post threshold region by solving Poisson's Equation in a two dimensional boundary value problem has been presented. In this analytical paper the modeling of potential is carried out by varying the device parameters to achieve the desired results.

Keywords: SHORT CHANNEL EFFECT; SYMMETRICAL DOUBLE GATE MOSFET; UN-DOPED ULTRA THIN BODY

Document Type: Research Article

DOI: https://doi.org/10.1166/jctn.2007.2390

Publication date: 2007-09-01

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  • Journal of Computational and Theoretical Nanoscience is an international peer-reviewed journal with a wide-ranging coverage, consolidates research activities in all aspects of computational and theoretical nanoscience into a single reference source. This journal offers scientists and engineers peer-reviewed research papers in all aspects of computational and theoretical nanoscience and nanotechnology in chemistry, physics, materials science, engineering and biology to publish original full papers and timely state-of-the-art reviews and short communications encompassing the fundamental and applied research.
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