Generalized Semiconductor Bloch Equations
Abstract:A set of generalized semiconductor Bloch equations (GSBE) is derived using nonequilibrium quantum superfield theoretical techniques. These equations describe the quantum transport dynamics of "electrons" and "holes" (or spin 1/2 particles), including many-body correlations such as Coulomb and phonon (and other excitation)-induced pairing between electrons, between electron and hole, and between holes, including polarization-induced electron-hole pairing, Zener tunneling, impact ionization, Auger recombination, etc. The set of GSBE exactly reduces to the density-matrix equations often employed in quantum optics. Likewise, in the nondissipative limit, this set of GSBE also exactly reduces to the set of equations in coherent wave theory used by Stahl and Balslev in the electrodynamics of semiconductor band edge. The formal aspect of the distribution-function transport theory of impact ionization, Auger recombination and Zener tunneling is discussed. Application of GSBE to the numerical analysis of a type II (i. e., with staggered band-gap alignment) heterojunction resonant tunneling device is formulated.
Document Type: Research Article
Publication date: September 1, 2004
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