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Study of the Electron Tunnelling in Single-Barrier Nanostructures Using the Conductive Atomic Force Microscopy

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Abstract:

We study a direct electron tunnelling in nanostructures consisting of two conductive materials separated by a thin nonconductive film. Triangle-shaped gold islands, formed on a natively-oxidized silicon substrate by means of nanosphere lithography (NSL), form the top electrodes of these metal—native oxide—silicon nanostructures. We employ the conductive atomic force microscopy (C-AFM) to characterize electronic and topographical properties of these nanostructures. The resulting maps of the current distribution through the nanostructure array reveal, geometrical as well as local physical properties of the native oxide film (thickness, dielectric integrity, etc.).

Keywords: CONDUCTIVE ATOMIC FORCE MICROSCOPY; NANOSPHERE LITHOGRAPHY; TUNNELLING CURRENT; TUNNELLING JUNCTIONS

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/jamr.2010.1016

Publication date: April 1, 2010

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  • Journal of Advanced Microscopy Research (JAMR) provides a forum for rapid dissemination of important developments in high-resolution microscopy techniques to image, characterize and analyze man-made and natural samples; to study physicochemical phenomena such as abrasion, adhesion, corrosion and friction; to perform micro and nanofabrication, lithography, patterning, micro and nanomanipulation; theory and modeling, as well as their applications in all areas of science, engineering, and medicine.
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