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SrRuO3-Buffered 0.70Pb(Mg1/3Nb2/3–0.30PbTiO3 Thin Films

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Abstract:

The 0.70Pb(Mg1/3Nb2/3)–0.30PbTiO3 (PMN–PT) thin films were fabricated on the SrRuO3(SRO)/Pt/TiO2/SiO2/Si substrate. The effects of SRO buffer layer on the phase purity, fatigue, dielectric and ferroelectric properties of PMN-PT thin films were investigated. The SRO buffer layer acted as a barrier layer depresses the formation of pyrochlore phase, enhances ferroelectric properties (2P r = 42.6 μC/cm2 and 2E c = 146.2 kV/cm), and improves fatigue endurance of PMNT thin films. Moreover, large nonlinear dielectric properties (dielectric tunability = 42.2%) of the films were also observed in the SRO-buffered PMN-PT thin film.

Keywords: 0.70PB(MG1/3NB2/3–0.30PBTIO3 THIN FILMS; ELECTRICAL PROPERTIES; SRRUO3 BUFFER LAYER

Document Type: Research Article

DOI: https://doi.org/10.1166/asl.2012.2011

Publication date: 2012-03-01

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