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Correlation Between Crystallite Orientation and Electrical Conductivity in Delafossite CuInO2 Thin Films: Effect of Low Energy Ion Irradiation

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Abstract:

In the present study, low energy oxygen ions at different fluence levels have been used for irradiating reactive sputter deposited copper indium oxide thin films. The glancing angle X-ray diffraction, HRTEM, EDAX and Raman studies reveal a change in film orientation from (012) in the as-deposited films to (006) orientation in the irradiated samples without the formation any secondary phases. The electrical conduction is observed to be thermally activated, and the activation energy decreases from 0.90 eV to about 0.36 eV with increase in oxygen ion fluence levels from 1.18 × 1016 to 4.71 × 1016 ions/cm2 of oxygen ions. The large change in activation energy of conduction has been explained due to change in crystallite orientation and highly anisotropic structure of CuInO2.

Keywords: CONDUCTION MECHANISM; CUINO2; DELAFOSSITE PHASE; ION IMPLANTATION; X-RAY DIFFRACTION

Document Type: Research Article

DOI: https://doi.org/10.1166/asl.2012.1921

Publication date: 2012-01-01

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