Low Leakage Current Operation of Carbon Nanotube Network Thin-Film Transistors at 100 Degree Celsius

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In this work we present the elevated temperature operation of carbon nanotube thin film transistors up to 100 °C in air ambient. It is demonstrated that for semiconducting nanotubes the OFF current leakage does not increase and the high ON/OFF ratio of transistors consisting of semiconducting nanotubes is preserved up to 100 °C. In addition, we investigate the factors affecting the operation of carbon nanotube transistors at high temperature for a range of source-to-drain spacing and metallic tube contents. The influence of change in tube–tube and tube–metal contact resistance on the device characteristics at high temperature is demonstrated.


Document Type: Research Article

DOI: http://dx.doi.org/10.1166/asl.2011.1861

Publication date: November 1, 2011

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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