Effect of Ultra Violet Process and Annealing on Reliability in Low Temperature Silicon Wafer Direct Bonding
Authors: Malik, Rizwan; Shi, Tielin; Tang, Zirong; Liu, Shiyuan
Source: Advanced Science Letters, Volume 4, Number 3, March 2011 , pp. 774-780(7)
Publisher: American Scientific Publishers
Abstract:Bond quality in low temperature wafer direct bonding is closely dependent on wafer-bow nanoscale surface topography and surface chemistry. Reliability due to effective surface activation is critical for bonding. In this paper, for low temperature silicon wafer direct bonding process with ultra violet (UV) light activation, dominated effects on silicon wafer's nanoscale surface topography and bonding strength developed at bonding interfaces are modified and characterized before and after UV activation by control of activation duration. The correlations of both annealing temperature and time versace bonding strength are explored experimentally. Ultraviolet exposure for three minutes is considered in this experimental research by pursuing the traditional wet chemical activation processes that are effective and more promising to enhance silicon direct bonding strength. Moreover, the reliability of silicon direct bonding with ultraviolet exposure enhancement is analyzed by following environmental tests. The outcomes attained, indicate that the bonding strength with ultraviolet exposure will definitely decrease after these environmental tests but it is yet higher than that of without ultraviolet exposure Infrared (IR) camera, Atomic force microscope (AFM) and Field scanning electron microscope (FSEM) are used to examine the dominant effects of ultraviolet exposure on silicon wafers' nano-topography. It is scrutinized that due to highly exposed ultraviolet atmosphere for the long time leads to the increase of surface roughness causes oppositely to decrease of the bonding strength and reliability of the bonded surfaces.
Document Type: Research article
Publication date: 2011-03-01
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