Synthesis of Controlled Diluted Magnetic Semiconductor by Ni Implantation in ZnO Crystal

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Abstract:

100 keV Ni ions were implanted in single crystal ZnO to synthesize diluted magnetic semiconductor (DMS). The ion fluence was varied from 4.9 × 1015 to 1.1 × 1016 ions/cm2 corresponding to the variation of dopant concentration from 3% to 7% to study the change in structural and optical properties of the material. No remarkable change was observed in the optical band gap of implanted samples. The resistivity is found to increase with increasing Ni concentration in ZnO with respect to 3% Ni implanted ZnO due to decrease in concentration of donor defects such as oxygen vacancies or Zn interstitials. The atomic force microscopic studies showed formation of nano rod like structure having average length of 240 nm in 5% Ni implanted ZnO. The 7% Ni implanted ZnO showed room temperature ferromagnetism whereas 7% Ni substituted ZnO prepared by pulsed laser deposition technique does not show room temperature ferromagnetism. Formation of any new or impurity phase of Ni cluster or NiO was not seen in 7% Ni implanted sample.

Document Type: Research Article

DOI: http://dx.doi.org/10.1166/asl.2009.1067

Publication date: September 1, 2009

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  • ADVANCED SCIENCE LETTERS is an international peer-reviewed journal with a very wide-ranging coverage, consolidates research activities in all areas of (1) Physical Sciences, (2) Biological Sciences, (3) Mathematical Sciences, (4) Engineering, (5) Computer and Information Sciences, and (6) Geosciences to publish original short communications, full research papers and timely brief (mini) reviews with authors photo and biography encompassing the basic and applied research and current developments in educational aspects of these scientific areas.
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