Controlled Growth of Graphene on Metal Substrates and STM Characterizations for Microscopic Morphologies
Recently, chemical vapor deposition (CVD) has been widely applied to the large-scale synthesis of graphene on various metal substrates. As a powerful and direct imaging method, scanning tunneling microscopy (STM) has been used to study the microscopic morphologies of graphene on metal
substrates, for the purpose of further optimizing the growth parameters. This review presents the recent progress in the controlled growth of graphene on Cu foils, Pt foils, and Ni substrates, as well as the research of the microscopic morphologies, defect states, and stacking orders of graphene.
Monolayer growth of graphene on Cu and Pt foils follows a surface catalyzed growth mechanism, while bilayer graphene growth follows an epitaxial growth mechanism. After the formation of a bilayer, the corrugated substrate breaks the planar conjugated π bonds of graphene,
inducing a binding configuration change from sp2 to sp3. Then, pristine wrinkles are introduced by the thermal expansion mismatch between graphene and the metal substrates. Finally, the roughness of graphene
on the Pt foils is considerably less than that of graphene on Cu foils, and the multifaceted interweaving Pt substrate has almost no effect on the in-plane continuity of graphene.
Keywords: Chemical vapor deposition; Graphene; Metal substrate; Scanning tunneling microscope
Document Type: Research Article
Publication date: 15 October 2012
- Acta Physico-Chimica Sinica, founded in 1985, is sponsored by the Chinese Chemical Society and organized by the College of Chemistry and Molecular Engineering, PekingUniversity. Since 1997, Acta Physico-Chimica Sinica has been indexed in SCI of ISI (US). Acta Physico-Chimica Sinica is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and material physical chemists. Manuscripts that are essentially reporting data, applications of data, or reviews of the literature are not suitable for publication in Acta Physico-Chimica Sinica.
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