Possibility of improved frequency response from intermixed quantum-well devices

Authors: Dao L.V.¹; Gal M.¹; Fu L.²; Tan H.H.²; Jagadish C.²

Source: Superlattices and Microstructures, Volume 29, Number 2, February 2001 , pp. 105-110(6)

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Abstract:

We have measured the carrier capture times into intermixed In_0.15Ga_0.85As/Al_0.2Ga_0.8As quantum wells using the photoluminescence up-conversion technique. We confirm that the carrier capture into intermixed quantum wells is significantly shorter than capture into similar but nonintermixed samples. Using below and above band-gap excitation we were able to separate the various components effecting the carrier capture into the quantum well. We show that the reduction in the carrier capture times is not related to the introduction of nonradiative centres but is the consequence of the change in the quantum well potential caused by intermixing. These results indicate that intermixed devices may have higher cut-off modulation frequency than similar but nonintermixed devices. Copyright 2001 Academic Press

Language: English

Document Type: Research article

Affiliations: 1: School of Physics, University of New South Wales, Sydney 2052, Australia 2: Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Institute of Advanced Studies, Australian National University, Canberra 0200, Australia

Publication date: 2001-02-01